Aluminum nitride perforated ceramic substrate

Aluminum Nitride Ceramic Substrate

No. Parameter Typical Value
1 Purity (AlN) ≥ 99.5% (99.0% / 99.9% available)
2 Oxygen Content (O) ≤ 1.0% 
3 Thermal Conductivity 170 – 200 W/(m·K)
4 Coefficient of Thermal Expansion (CTE) 4.5 × 10⁻⁶ /K (20–300°C)
5 Volume Resistivity ≥ 10¹³ Ω·cm
6 Dielectric Constant (1 MHz) 8.5 – 9.0
7 Flexural Strength ≥ 300 MPa
8 Surface Roughness (Ra) ≤ 0.3 μm (substrate)
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Aluminum Nitride Ceramic Substrate

Aluminum Nitride (AlN) ceramic substrate is a high-performance advanced ceramic material renowned for its excellent thermal conductivity (≥170 W/m·K) and superior electrical insulation. It is the preferred substrate material for high-power electronics, semiconductor packaging, and advanced thermal management applications. Compared to Al₂O₃ and BeO, AlN offers significantly better heat dissipation, lower thermal stress, and greater environmental safety, while supporting precision machining and custom shapes.

Product Features：

  • Extremely high thermal conductivity ≥170 W/m·K (superior to most ceramics)
  • Excellent electrical insulation with high volume resistivity
  • Thermal expansion coefficient highly matched to Si/GaN, minimizing thermal stress
  • High mechanical strength, high temperature resistance (≥1500°C), and excellent thermal shock resistance

Related AlN Ceramic products：

  • AlN ceramic substrates (standard & custom)
  • AlN Direct Bonded Copper (DBC) substrates
  • AlN ceramic heat sinks / heaters
  • AlN crucibles & high-temperature corrosion-resistant parts

Application Scenarios：

  • High-power modules & transistor substrates
  • LED / semiconductor laser heat-dissipation substrates
  • GaN / AlGaN epitaxial growth substrates
  • High-frequency devices & power electronics packaging

FAQ

Q1: Which has better heat dissipation, AlN or Al₂O₃?

A: AlN far outperforms Al₂O₃ (170+ vs 20–30 W/m·K), making it ideal for high-power thermal management.

Q2: What is the maximum operating temperature of AlN?

A: It maintains excellent stability up to at least 1500°C; typical electronic applications use it well below this limit.

Q3: Is AlN safer than BeO?

A: Yes, AlN is non-toxic and non-radioactive, serving as the mainstream eco-friendly alternative to BeO.

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